Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the reported, with electron mobilities ~100 cm2/V·s achieved room temperature, values reaching 155 a heterostructure including polycrystalline InAs film. Test structures fabricated an aluminum oxide (Al2O3) top-gate dielectric show that transistor-type behavior is when poly implemented channel material, maximum ION/IOFF > 250 −50 = 90 temperature. Factors limiting ratio investigated recommendations made future implementation this material.